CY7C1041CV33-20VXE code extraction

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The CY7C1041CV33 Automotive is a high performance CMOS
static RAM organized as 262,144 words by 16 bits.
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0
 through I/O7
), is written into the location
specified on the address pins (A0
 through A17
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8
 through
I/O15
) is written into the location specified on the address pins
(A0
 through A17
).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on I/O0
 to I/O7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O8
 to I/O15
. For more information, see the Truth
Table on page 11 for a complete description of Read and Write
modes.
The input and output pins (I/O0
 through I/O15
) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW
and WE LOW).

CY7C1041CV33-20VXE code extraction

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4-Mbit (256 K × 16) Static RAM
Features
 Temperature ranges
 Automotive-A: –40 °C to 85 °C
 Automotive-E: –40 °C to 125 °C
 Pin and function compatible with CY7C1041BNV33
 High speed
 tAA = 10 ns (Automotive-A)
 tAA = 10 ns (Automotive-E)
 Low active power
 432 mW (max)
 Automatic power down when deselected
 TTL-compatible inputs and outputs
 Easy memory expansion with CE and OE features
 Available in Pb-free and non Pb-free 44-pin 400 Mil SOJ, 44-pin
TSOP II and 48-ball FBGA packages

CY7C1041D-10VXIT code extraction

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The CY7C1041D is a high-performance CMOS static RAM
organized as 256K words by 16 bits. Writing to the device is
accomplished by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0
 through I/O7
), is written into the location
specified on the address pins (A0
 through A17
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8
 through
I/O15
) is written into the location specified on the address pins
(A0
 through A17
).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O0
 to I/O7
. If Byte High Enable (BHE) is LOW, then
data from memory will appear on I/O8
 to I/O15
. See the truth table
at the back of this data sheet for a complete description of

read
and write modes.
The input/output pins (I/O0
 through I/O15
) are placed in a
high-impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW,
and WE LOW).
The CY7C1041D is available in a standard 44-pin 400-mil-wide
body width SOJ and 44-pin TSOP II package with center power
and ground (revolutionary) pinout.

CY7C1041D-10VXIT code extraction

CY7C1041D-10VXIT code extraction, chip decryption, mcu crack, dsp crack .
The CY7C1041D is a high-performance CMOS static RAM
organized as 256K words by 16 bits. Writing to the device is
accomplished by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0
 through I/O7
), is written into the location
specified on the address pins (A0
 through A17
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8
 through
I/O15
) is written into the location specified on the address pins
(A0
 through A17
).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O0
 to I/O7
. If Byte High Enable (BHE) is LOW, then
data from memory will appear on I/O8
 to I/O15
. See the truth table
at the back of this data sheet for a complete description of read
and write modes.
The input/output pins (I/O0
 through I/O15
) are placed in a
high-impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW,
and WE LOW).
The CY7C1041D is available in a standard 44-pin 400-mil-wide
body width SOJ and 44-pin TSOP II package with center power
and ground (revolutionary) pinout.

CY7C1041DV33-10BVXIT code extraction

CY7C1041DV33-10BVXIT code extraction, chip decryption, mcu crack, dsp crack .
Features
 Temperature ranges
 Industrial: –40 °C to 85 °C
 Pin and function compatible with CY7C1041CV33
 High speed
 tAA = 10 ns
 Low active power
 ICC = 90 mA
 Low CMOS standby power
 ISB2
 = 10 mA
 2.0 V data retention
 Automatic power-down when deselected
 TTL compatible inputs and outputs
 Easy memory expansion with CE and OE features
 Available in Pb-free 48-ball VFBGA, 44-pin (400-mil) molded
SOJ, and 44-pin TSOP II Packages

CY7C1010DV33-10ZSXI code extraction

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Features
 Pin and function compatible with CY7C1010CV33
 High speed
 tAA = 10 ns
 Low active power
 ICC = 90 mA at 10 ns
 Low CMOS standby power
 ISB2
 = 10 mA
 2.0 V data retention
 Automatic power down when deselected
 TTL-compatible inputs and outputs
 Easy memory expansion with CE and OE features
 Available in Pb-free 36-pin SOJ and 44-pin TSOP II packages

CY7C026A-20AXCT MCU Code Reading

CY7C026A-20AXCT MCU Code Reading, Programm Reading, MCU Crack,

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The CY7C026A is a low power CMOS 16K x 16 dual-port static
RAM. Various arbitration schemes are included on the devices
to handle situations when multiple processors access the same
piece of data. Two ports are provided, permitting independent,
asynchronous access for reads and writes to any location in
memory. The device can be utilized as standalone 16-bit
dual-port static RAM or multiple devices can be combined to
function as a 32-bit or wider master/slave dual-port static RAM.
An M/S pin is provided for implementing 32-bit or wider memory
applications without the need for separate master and slave
devices or additional discrete logic. Application areas include
interprocessor/multiprocessor designs, communications status
buffering, and dual-port video/graphics memory.
Each port has independent control pins: Chip Enable (CE), Read
or Write Enable (R/W), and Output Enable (OE). Two flags are
provided on each port (BUSY and INT). BUSY signals that the
port is trying to access the  same location currently being
accessed by the other port. The Interrupt flag (INT) permits
communication between ports or systems by means of a mail
box. The semaphores are used to pass a flag, or token, from one
port to the other to indicate that a shared resource is in use.

The
semaphore logic is comprised of eight shared latches. Only one
side can control the latch (semaphore) at any time. Control of a
semaphore indicates that a shared resource is in use. An
automatic power down feature is controlled independently on
each port by the chip enable pin.
The CY7C026A is available in 100-pin thin quad plastic flatpack
(TQFP) packages.

CY7C026AV-25AC MCU Code Reading

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Features
 True dual-ported memory cells which enable simultaneous
access of the same memory location
 4, 8 or 16 K × 16 organization
(CY7C024AV/025AV/026AV)
 0.35 micron CMOS for optimum speed and power
 High speed access: 20 ns and 25 ns
 Low operating power
 Active: ICC = 115 mA (typical)
 Standby: ISB3
= 10 A (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master and Slave
chip select when using more than one device
 On chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flag for port-to-port communication
 Separate upper byte and lower byte control
 Pin select for Master or Slave (M/S)
 Commercial and industrial temperature ranges
 Available in 100-pin Pb-free TQFP and 100-pin TQFP

CY7C027AV-25AXI MCU Code Reading

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Chip Decryption.
Features
 True dual-ported memory cells which allow
simultaneous access of the same memory location
 32K x 16 organization (CY7C027V/027AV
[1]
)
 64K x 16 organization (CY7C028V)
 32K x 18 organization (CY7C037AV)
 64K x 18 organization (CY7C038V)
 0.35 micron Complementary metal oxide semiconductor
(CMOS) for optimum speed and power
 High speed access: 15, 20, and 25 ns
 Low operating power
 Active: ICC = 115 mA (typical)
 Standby: ISB3
= 10 A (typical)
 Fully asynchronous operation
 Automatic power-down
 Expandable data bus to 32/36 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flag for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and Industrial temperature ranges
 100-pin Pb-free Thin quad plastic flatpack (TQFP) and 100-pin
TQFP

CY7C027-20AXIT MCU Code Reading

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Chip Decryption. 
Features
 True dual-ported memory cells which allow simultaneous
access of the same memory location
 32 K × 16 organization (CY7C027)
 64 K × 16 organization (CY7C028)
 0.35 micron CMOS for optimum speed and power
 High speed access: 15 and 20 ns
 Low operating power
 Active: ICC = 180 mA (typical)
 Standby: ISB3
= 0.05 mA (typical)
 Fully asynchronous operation
 Automatic power down
 Expandable data bus to 32 bits or more using Master/Slave
chip select when using more than one device
 On-chip arbitration logic
 Semaphores included to permit software handshaking
between ports
 INT flags for port-to-port communication
 Separate upper-byte and lower-byte control
 Dual chip enables
 Pin select for Master or Slave
 Commercial and industrial temperature ranges
 Available in 100-pin TQFP
 Pb-free packages available